PART |
Description |
Maker |
SDR955_61 SDR953_61 SDR953-61 SDR954_61 |
50 AMP 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SDR955 SDR953 SDR954 |
50 AMP 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
Solid States Devices, Inc
|
SDR625CAP6 |
40 AMPS 300-500 VOLTS 35 nsec COMMON ANODE & CATHODE HYPERFAST CENTERTAP RECTIFIER
|
Solid States Devices, Inc.
|
SHF1103SM SHF1100SM SHF1101SM SHF1102SM |
1 AMP 50 - 300 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SDR905 SDR900 SDR901 SDR902 SDR903 SDR904 |
30 AMP 50-500 VOLTS 50 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SFA30PJE SFA10PJE SFA20PJE |
6 AMP 100-300 VOLTS 40 nsec HYPER FAST POSITIVE CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SDR952/3 SDR950/3 SDR951/3 SDR950-3 |
60 AMP 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER 60 A, 100 V, SILICON, RECTIFIER DIODE, TO-3 60 AMP 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER 60安培100 - 200伏特5纳秒超快速整
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
SDR9510M SDR9511Z |
50 AMP 800-1100 VOLTS 80 nsec ULTRA FAST RECTIFIER
|
SOLID STATE DEVICES INC
|
SDR4KSMS SDR4GSMS SDR4MSMS SDR4JSMS SDR4NSMS |
3 AMP 400-1200 VOLTS 50-80 nsec ULTRA FAST RECTIFIER
|
Solid States Devices, Inc.
|
SDR9511 |
50 AMP 800-1100 VOLTS 80 nsec ULTRA FAST RECTIFIER
|
SOLID STATE DEVICES INC
|